Device and reliability of high-K Al2O3 gate dielectric with good mobility and low Dit

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 135-136

  Chin, Albert ^a   Liao, C C ^a   Lu, C H ^a   Chen, W J ^a   Tsai, C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CARRIER MOBILITY; CURRENT DENSITY; DIELECTRIC MATERIALS; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; OXIDATION; PERMITTIVITY; RELIABILITY; SECONDARY ION MASS SPECTROMETRY; SILICA;

CAPACITANCE VOLTAGE MEASUREMENTS; GATE DIELECTRIC; INTERFACE DENSITY; STRESS INDUCED LEAKAGE CURRENT;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0033281381     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)