Explanation of soft and hard breakdown and its consequences for area scaling

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 449-452

  Alam, Muhammad A ^a   Weir, Bonnie ^a   Bude, Jeff ^a   Silverman, P ^a   Monroe, Don ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); MATHEMATICAL MODELS; OXIDES; PERCOLATION (SOLID STATE); ULTRATHIN FILMS; WEIBULL DISTRIBUTION;

AREA SCALING; BIMODAL FAILURE DISTRIBUTION; HARD BREAKDOWN; NONLINEAR TUNNELING CONDUCTANCE; POWER LAW CONDUCTANCE; SOFT BREAKDOWN;

ELECTRIC BREAKDOWN;

EID: 0033342074     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)