Ultrathin nitride/oxide (N/O) gate dielectrics for p+-polysilicon gated PMOSFET's prepared by a combined remote plasma enhanced CVD/thermal oxidation process

IEEE Electron Device Letters

Volumn 19, Issue 10, 1998, Pages 367-369

  Wu, Yider ^a   Lucovsky, Gerald ^a  

^a North Carolina State University   (United States)

Author keywords

Boron penetration; Gate dielectrics; N O; Nitride

Indexed keywords

BORON; GATES (TRANSISTOR); HOT CARRIERS; MOSFET DEVICES; NITRIDES; OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; THERMOOXIDATION; ULTRATHIN FILMS;

POLYSILICON;

DIELECTRIC FILMS;

EID: 0032188244     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.720188     Document Type: Article

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