Direct extraction of the electron tunneling effective mass in ultrathin SiO2

Applied Physics Letters

Volumn 69, Issue 18, 1996, Pages 2728-2730

  Brar, B ^a   Wilk, G D ^a   Seabaugh, A C ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000697110     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117692     Document Type: Article

References (12)

1. R. Tsu, A. Filios, C. Lofgren, D. Cahill, J. Vannostrand, and C. G. Wang, Solid-State Electron, (to be published).
2. A. C. Seabaugh, C.-C. Cho, R. M. Steinhoff, T. S. Moise, K. H. Park, and Y. Okuno, Future Electron Devices J. (to be published).
3. M. Hiroshima, T. Yasaka, S. Miyazaki, and M. Hirose, Jpn. J. Appl. Phys. 33, 395 (1994).
4. S. Zafar, K. A. Conrad, Q. Liu, and E. A. Irene, Appl. Phys. Lett. 67, 1031 (1995).
5. M. Depas, R. L. V. Meirhaeghe, W. H. Laflere, and F. Cardon, Solid-State Electron. 37, 433 (1994).
6. A. Faigon and F. Campabadal, Solid-State Electron. 39, 251 (1996).
7. J. Maserjian, J. Vac. Sci. Technol. 11, 996 (1974).
8. G. Simmons, J. Appl. Phys. 34, 1793 (1963).
9. 2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988).
10. C. N. Berglund, IEEE Trans. Electron Devices ED-13, 701 (1966).
11. J. Maserjian, G. Petersson, and C. Svensson, Solid-State Electron. 17, 335 (1974).
12. R. Rios and N. D. Arora, in IEDM, 1994, p. 613.