Electrical properties of RuO2 gate electrodes for dual metal gate Si-CMOS

IEEE Electron Device Letters

Volumn 21, Issue 12, 2000, Pages 593-595

  Zhong, Huicai ^a   Heuss, Greg ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRODES; GATES (TRANSISTOR); MOS CAPACITORS; SILICON; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY; X RAY DIFFRACTION;

GATE ELECTRODES;

RUTHENIUM COMPOUNDS;

EID: 0034498529     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.887476     Document Type: Article

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