The effects of oxidation temperature on the capacitance-voltage characteristics of oxidized AIN films on Si

Applied Physics Letters

Volumn 71, Issue 26, 1997, Pages 3802-3804

  Kolodzey, J ^a   Chowdhury, E A ^a   Qui, G ^a   Olowolafe, J ^a   Swann, C P ^b   Unruh, K M ^a   Suehle, J ^c   Wilson, R G ^d   Zavada, J M ^e  

^a UNIVERSITY OF DELAWARE   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d Hughes Aircraft Co   (United States)

^e US ARO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001633975     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120510     Document Type: Article

References (14)

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