1.5 nm direct-tunneling gate oxide si mosfet's

IEEE Transactions on Electron Devices

Volumn 43, Issue 8, 1996, Pages 1233-1242

  Momose, Hisayo Sasaki ^a   Ono, Mizuki ^a   Yoshitomi, Takashi ^a   Ohguro, Tatsuya ^a   Nakamura, Shin Ichi ^a   Saito, Masanobu ^a   Iwai, Hiroshi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; ELECTRIC RESISTANCE; HOT CARRIERS; LEAKAGE CURRENTS; OXIDES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; TRANSCONDUCTANCE;

DRAIN CURRENT; SOLID PHASE DIFFUSION; ULTRATHIN DIRECT TUNNELING GATE OXIDE;

MOSFET DEVICES;

EID: 0030212001     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.506774     Document Type: Article

References (17)

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