Scaling the gate dielectric: materials, integration, and reliability

IBM Journal of Research and Development

Volumn 43, Issue 3, 1999, Pages 245-264

  Buchanan, D A ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS DEVICES; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; ULTRATHIN FILMS;

CHIP LIFETIMES; GATE DIELECTRIC; SILICON OXYNITRIDE;

DIELECTRIC MATERIALS;

EID: 0032680398     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.433.0245     Document Type: Article

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