Metal organic vapour phase epitaxy of GaN and lateral overgrowth

Reports on Progress in Physics

Volumn 67, Issue 5, 2004, Pages 667-715

  Gibart, Pierre ^a  

^a LUMILOG   (France)

Author keywords

[No Author keywords available]

Indexed keywords

PHYSICS;

EID: 2542503617     PISSN: 00344885     EISSN: None     Source Type: Journal    
DOI: 10.1088/0034-4885/67/5/R02     Document Type: Article

References (257)

1. Dingle R, Shaklee R, Leheny R F and Zetterstrom R B 1971 Appl. Phys. Lett. 19 5
2. Amano H, Akasaki I, Kozawa T, Hiramatsu K, Sawaki N, Ikeda K and Ishii Y 1988 J. Lumin. 40-48 121
3. Amano H, Kito M, Hiramatsu K and Akasaki I 1989 Japan. J. Appl. Phys. 28 L2112
4. Nakamura S, Mukai T, Senoh M and Iwasa N 1992 Japan. J. Appl. Phys. 31 1258
5. Nakamura S and Fasol G (ed) 1997 The Blue Laser Diode (Berlin: Springer)
6. Nakamura S et al 1997 Proc. ICNS'97 (Tokushima, Japan) ed K Hiramatsu, p 444
7. Nakamura S et al 1998 J. Cryst. Growth 189/190 820
8. Grzegory I and Porowski S 2000 Thin Solid Films 367 281
9. Liu L and Edgar J H 2002 Review: substrates for gallium nitride epitaxy Mater. Sci. Eng. R 274 1-67
10. Anderson T 2003 US2003024475
11. Pawlowski R P, Theodoropoulos C, Salinger A G, Mountziaris T J, Moffat H K, Shadid J N and Thrush E J 2000 J. Cryst. Growth 221 622
12. Theodoropoulos C, Mountziaris T J, Moffat H K and Han J 2000 J. Cryst. Growth 217 65
13. Harafuji K, Hasegawa Y, Ishibashi A, Tsujimura A, Kidoguchi I, Ban Y and Ohnaka K 2000 Japan. J. Appl. Phys. 39 6180
14. Sato M 1997 Solid-State Electron. 41 223
15. Danielsson Ö and Janzén E 2003 J. Cryst. Growth 253 26-37
16. Wakahara A, Genba J, Yoshida A and Saiki H 2000 J. Cryst. Growth 221 305-10
17. Beaumont B, Gibart P and Faurie J P 1995 J. Cryst. Growth 156 140
18. Beaumont B and Gibart P 1995 Proc. Int. Conf. on Semiconductor Heteroepitaxy (ICSH'95) ed B Gil and R L Aulombard (Singapore: World Scientific) p 258
19. Sato H, Takahashi H and Watanabe A 1996 Appl. Phys. Lett. 68 3617
20. Freedman A and Robinson G N 1996 1st Int. Symp. Gallium Nitride Related Materials (Pittsburgh, PA: Materials Research Society) p 73
21. Chtchekine D G et al 1997 J. Appl. Phys. 81 2197
22. Jones C R, Lei T, Kaspi R and Evans K R 1996 Mater. Soc. Res. 141 5
23. Newman N 1997 J. Cryst. Growth 178 102
24. Neumayer D A et al 1966 Mater. Res. Soc. 85
25. Kuech T F, Gu S, Wate R, Zhang L, Sun J, Dumesic J A and Redwing J M 2001 Mater. Res. Soc. Symp. Proc. 639 G1.1.1.
26. Pawlowski R P et al 2000 J. Cryst. Growth 221 622-8
27. Beaumont B, Vaille M, Boufaden T, el Jani B and Gibart P 1997 J. Cryst. Growth 170 316
28. Nakamura S 1991 Japan. J. Appl. Phys. 30 1620
29. Hiramatsu K, Itoh S, Amano H, Akasaki I, Kuwano N, Shiraishi T and Oki K 1991 J. Cryst. Growth 115 628
30. Akasaki I, Amano H, Koide Y, Hiramatsu K and Sawaki N 1989 J. Cryst. Growth 98 98
31. Amano H, Sawaki N, Akasaki I and Toyoda Y 1986 Appl. Phys. Lett. 48 453
32. Ambacher O 1998 J. Phys. D: Appl. Phys. 31 2653-710
33. Morkoç H 2001 Mater. Sci. Eng. R 33 135-207
34. Haffouz S, Beaumont B, Vennéguès P and Gibart P 2002 Influence of the growth mode on the physical properties of GaN grown by Metal Organic Vapour Phase Epitaxy III-V Nitride Semiconductors: Growth and Substrate Issues O Manasreh and I T Ferguson ed (London: Taylor and Francis) p 477
35. Gibart P and Beaumont B 2002 Epitaxial Lateral Overgrowth and Other Approaches for Low-defect-density GaN/sapphire Proc. SPIE CR83 112
36. Uchida K et al 1996 J. Appl. Phys. 79 3487
37. Tokuda T, Wakahara A, Noda S and Sasaki A 1998 J. Cryst. Growth 183 62-8
38. Kim K S, Kim K Y and Lee H J 1999 Semicond. Sci. Technol. 14 557-60
39. Keller S et al 1996 Appl. Phys. Lett. 68 1525
40. Van der Stricht W et al 1997 J. Cryst. Growth 170 344
41. Vennéguès P, Beaumont B, Vaille M and Gibart P 1997 J. Cryst. Growth 173 249
42. Wu X H, Fini P, Keller S, Tarsa E J, Heying B, Mishra U K and DenBaars S P and Speck J S 1996 Japan. J. Appl. Phys. 35 1648
43. Wu X H, Kapolnek D, Tarsa E J, Heying B, Keller S, Keller B P, Mishra U K, DenBaars S P and Speck J S 1996 Appl. Phys. Lett. 68 1371
44. Wu X H, Fini P. Tarsa E J, Heying B, Keller S, Mishra U K, DenBaars S P and Speck J S 1998 J. Cryst. Growth 189/190 231-43
45. Tanaka S, Iwai S and Aoyagi Y 1996 Appl. Phys. Lett. 69 4096
46. Shen X-Q, Tanaka S, Iwai S and Aoyagi Y 1998 Appl. Phys. Lett. 72 344
47. Haffouz S, Lahrèche H, Vennéguès, Beaumont B, Omnès F and Gibart P 1998 Appl. Phys. Lett. 73 1278
48. Haffouz S, Beaumont B, Vénnègues P and Gibart P 1999 Phys. Status Solidi a 176 677
49. Eagleasham D J, Unterwald F C and Jacobson D C 1993 Phys. Rev. Lett. 70 966
50. Han J, Ng T-B, Biefeld R M, Crawford M H and Follstaedt D M 1997 Appl. Phys. Lett. 7 3114
51. Haffouz S, Kirilyuk V, Hageman P R, Macht L, Weyher J L and Larsen P K 2001 Appl. Phys. Lett. 79 2390-2
52. Sakai S, Wang T, Morishima Y and Naoi Y 2000 J. Cryst. Growth 221 334
53. Park S-E, Lim S-M, Lee C-R, Kim C S and Byungsung O 2003 J. Cryst. Growth 487-491
54. Rosner S J, Car E C, Ludowise M J, Girolami G and Erikson H I 1997 Appl. Phys. Lett. 70 420
55. Sugahara T, Sato H, Hao M, Naoi Y, Kurai S, Tottori S, Yamashita K, Nishino K, Romano L T and Sakai S 1998 Japan. Appl. Phys. Lett. 37 398
56. T. Böttcher, Einfeldt S, Figge S, Chierchia R, Heinke H, Hommel D and Speck J S 2001 Appl. Phys. Lett. 78 1976
57. Tsukihara M, Naoi Y, Sakai S, Li H D 2003 Appl. Phys. Lett. 82 919-21
58. Iwaya M, Takeuchi T, Yamaguchi S, Wetzel C, Amano H and Akasaki I 1998 Japan. J. Appl. Phys. 37 L316
59. Amano H, Iwaya M, Kashima T, Katsuragawa M, Akasaki I, Han J, Hearne S, Floro J A, Chason E and Figiel J 1998 Japan. Appl. Phys. Lett. 37 L1540
60. Yang C-C, Wu M-C, Chang C-A and Chi G-C 1999 J. Appl. Phys. 85 8427-31
61. Yang C-C, Wu M-C and Chi G-C 1999 J. Appl. Phys. 86 6120-3
62. Koleske D D, Twigg M E, Wickenden A E, Henry R L, Gorman R J and Freitas J A 1999 Appl. Phys. Lett. 75 3141
63. Amano H, Iwaya M, Kashima T, Katsurugawa M, Akasaki I, Han J, Hearne S, Floro J A, Chason E and Figiel J 1998 Japan. Appl. Phys. Lett. 37 L1540
64. Bourret-Courchesne E D, Kellermann S, Yu K M, Benamara M, Liliental-Weber Z, Washburn J, Irvine S J C and Stafford A 2000 Appl. Phys. Lett. 77 3562-4
65. Benamara M, Liliental-Weber Z, Kellermann S. Swider W, Washburn J, Mazur J and Bourret-Courchesne E D 2000 J. Cryst. Growth 218 447
66. Cho H K, Lee J Y, Kim K S, Yang G M, Song J H and Yu P W 2000 J. Appl. Phys. 89 2617
67. Kim K S, Oh C S, Lee K J, Yang G M, Hong C-H, Lim K Y, Lee H J and Yoshikawa A 1999 J. Appl. Phys. 85 8441
68. Cho H K, Lee J Y, Kim K S, Yang G M, Song J H and Yu P W 2001 J. Appl. Phys. 89 2671
69. Ito T, Sumiya M, Takano Y, Ohtsuka K and Fuke S 1999 Japan. Appl. Phys. Lett. 38 649
70. Wang T, Shirahama T, Sun H B, Wang H X, Bai J, Sakai S and Misawa H 2000 Appl. Phys. Lett. 76 2220
71. Hashimoto T, Yuri M, Ishida M, Terakoshi Y, Imafuji O, Sugino T and Itoh K 1999 Japan. Appl. Phys. Lett. 38 6605
72. Xu H Z, Takahashi K, Wang C X, Wang Z G, Okada Y, Kawabe M, Harrison I and Foxon C T 2001 J. Cryst. Growth 222 110
73. Yuan H, Lu D-C, Liu X, Chen Z, Han P, Wang X and Wang D 2002 J. Cryst. Growth 234 77-84
74. Yuasa T, Ueta Y, Tsuda Y, Ogawa A, Taneya M and Takao K 1999 Japan. Appl. Phys. Lett. 38 L703-5
75. Figge S, Böucher T, Einfeldt S and Hommel D 2000 J. Cryst. Growth 221 262
76. Yamaguchi S, Kariya M, Kosaki M, Yukawa Y, Nitta S, Amano H and Akasaki I 2001 J. Appl. Phys. 89 7820
77. Pozina G, J. Bergman P, Monemar B, Yamaguchi S, Amano H and Akasaki I 2000 Appl. Phys. Lett. 76 3388
78. Yamaguchi S, Kariya M, Nitta S, Amano H and Akasaki I 1999 Appl. Phys. Lett. 75 4106
79. Yamaguchi S, Kariya M, Nitta S, Kashima T, Kosaki M, Yukawa Y, Amano H and Akasaki I 2000 J. Cryst. Growth 221 327
80. Chung H M, Chuang W C, Pan Y C, Tsai C C, Lee M C, Chen W H, Chen W K, Chiang C I, Lin C H and Chang H 2000 Appl. Phys. Lett. 76 897
81. Lu D-C, Wang C, Yuan H, Liu X and Wang X 2000 J. Cryst. Growth 221 356
82. Kachi T, Tomita K and Tadano H 1998 Appl. Phys. Lett. 72 704
83. Asano T, Yanashima K, Asatsuma T, Hino T, Yamaguchi T, Tomiya S, Funato K, Kobayashi T and Ikeda M 1999 Phys. Status Solidi a 176 23
84. Liu B L, Lachab M, Jia A, Yoshikawaa A and Takahashi K 2002 J. Cryst. Growth 234 637
85. Ponce F A 1997 MRS Bull. 22 51
86. Weeks W T Jr, Bremser M D, Ailey K S, Carlson E. Perry W G and Davis R F 1995 Appl. Phys. Lett. 67 401
87. Weeks T W Jr., Bremser M D, Ailey K S, Carlson E, Perry W G, Linv E L, El-Masry N A and Davis R F 1996 J. Mater. Res. 11 1011
88. Hanser A D, Wolden C A, Perry W G, Zheleva T, Carlson E P, Banks A D, Therrien R J and Davis R F 1998 J. Electronic. Mater. 27 238
89. Einfeldt S, Reitmeier Z J and Davis R F 2003 J. Cryst. Growth 253 129-41
90. Edwards N V, Bremser M D, Davis R F, Batchelor A D, Yoo S D, Karan C F and Aspnes D E 1998 Appl. Phys. Lett. 73 2808
91. Kasaka T A, Ando S, Nishida T, Saito H and Kobayashi N 2001 Appl. Phys. Lett. 79 1261
92. Moran B, Hansen M, Craven M D, Speck J S and DenBaars S P 2000 J. Cryst. Growth 221 301
93. Lahrèche H, Vennéguès P, Vaille M, Beaumont B, Laügt M, Lorenzini P and Gibart P 1999 Semicond. Sci. Technol. 14 L33
94. Smart J S, Schremer A T, Weinman N G, Ambacher O, Eastman L F and Shealy J R 1999 Appl. Phys. Lett. 75 388
95. Ruterana P and Nouet G 2001 Phys. Status Solidi b 227 177-228
96. Hacke P, Detchprohm T, Hiramatsu K, Sawaki N, Tadatomo K and Miyake K 1994 J. Appl. Phys. 76 304
97. Hacke P, Nakayama H, Detchprohm T, Hiramatsu K and Sawaki N 1996 Appl. Phys. Lett. 68 1362
98. Auret F D, Goodman S A, Koschnick F K, Spaeth J M. Beaumont B and Gibart P 1999 Appl. Phys. Lett. 74 407
99. Muret P, Philippe A, Monroy E, Munoz E, Beaumont B, Omnès F and Gibart P 2002 J. Appl. Phys. 91 2998
100. Heying B, Tarsa E J, Elsass C R, Fini P, DenBaars S P and Speck J S 1999 J. Appl. Phys. 85 6470
101. Wu X H, Elsass C R, Abase A, Mack M, Keller S, Petroff P M, DenBaars S P, Speck J S and Rosner S J 1998 Japan. Appl. Phys. Lett. 37 L398
102. Weimann N G, Eastman L F, Dharanipal D, Ng H M and Moustakas T D 1998 J. Appl. Phys. 83 3656
103. Farvaque J L 2000 Phys. Rev. B 62 2536
104. Farvacque J-L, Bougrioua Z and Moerman I 2001 Phys. Rev. B 63 115202
105. Hansen P J et al 1998 Appl. Phys. Lett. 72 2247
106. Youtsey C, Romano L T and Adesida I 1998 Appl. Phys. Lett. 73 797
107. Chichibu S F, Torii K, Deguchi T, Sato T, Setoguchi A, Nakanishi H, Azuhata T and Nakamura S 2000 Appl. Phys. Lett. 76 1576
108. Lester S D, Ponce F A, Craford M G and Steigerwald D A 1995 Appl. Phys. Lett. 66 1249
109. Elsner J, Jones R, Sitch P K, Porezag V D, Elstner M, Frauenheim T, Heggie M I, Oberg S and Briddon P R 1997 Phys. Rev. Lett. 79 3672
110. Speck J S and Rosner S J 1999 Physica B 273-274 24
111. Nakamura S et al 1998 Appl. Phys. Lett. 72 211
112. Keller S, Keller B P, Wu Y F, Heying B, Kapolnek D, Speck J S, Mishra U K and DenBaars S P 1996 Appl. Phys. Lett. 68 1525
113. Ng T-B, Han J, Biefeld R M and Weckwerth M V 1998 J. Electron. Mater. 27 190
114. Northrup J E 2001 App. Phys. Lett. 78 2288
115. Hino T, Tomiya S, Miyajima T, Yanashima K, Hashimoto S and Ikeda M 2000 Appl. Phys. Lett. 76 3421
116. Xin Y, Pennycook S J, Browning N D, Nellist P D, Sivananthan S, Faurie J-P and Gibart P 1998 Appl. Phys. Lett. 72 2680
117. Elsner J, Kaukonen M, Heggie M I, Haugk M, Frauenheim Th and Jones R 1998 Phys. Rev. 58 15357
118. Wright F and Furthmuller J 1998 Appl. Phys. Lett. 72 3467
119. Lee S M et al 2000 Phys. Rev. B 61 16033
120. Temmemle T, Albrecht M, Strunk H P, Blumenau A T, Heggie M I, Elsner J, Frauenheim T, Schenk H P D and Gibart P 2001 Inst. Phys. Conf. Ser 169 323
121. Xin Y, James E M, Arslan I, Sivananthan S, Browning N D, Pennycook S J, Omnès F, Beaumont B, Faurie J-P and Gibart P 2000 Appl. Phys. Lett. 76 466
122. Stampfl C and Van de Walle C G 1998 Phys. Rev. B 57 R 15052
123. Northrup J E 1998 Appl. Phys. Lett. 72 2316
124. Bandic Z Z, McGill T C and Ikonic Z 1997 Phys. Rev. B 56 35664
125. Calleja E, Sanchez F J, Calle F, Tijero J M G, Sanchez-Rojas J L, Beaumont B, Lorenzini P and Gibart P 1997 Phys. Rev. B 55 4689
126. Neugebauer J and Van de Walle C 1995 Appl. Phys. Lett. 69 503
127. Mattila T, Seitsonen A P and Nieminen R M 1996 Phys. Rev. B 54 1474
128. Mattila T and Nieminen R M 1997 Phys. Rev. B 55 9571
129. Chen H M, Chen Y F, Lee M C and Feng M S 1997 Phys. Rev. B 56 6942
130. Frayssinet E, Beaumont B, Faurie J P, Gibart P, Makkai Zs, Pécz B, Lefebvre P and Valvin P 2002 MRS Int. J. Nitride Semicond. Res. 7 8
131. Figge S, Böttcher T, Einfeldt S and Hommel D 2000 J. Cryst. Growth 221 262
132. Koleske D D, Fischer A J, Allerman A A, Mitchell C C, Cross K C, Kurtz S R, Figiel J J, Fullmer K W and Breiland W G 2002 Appl. Phys. Lett. 81 1940
133. Park S-E, Lim S-M, Lee C-R, Kim C S and Byungsung O 2003 J. Cryst. Growth 249 487-91
134. Gil B, Hamdani F and Morkoc H 1996 Phys. Rev. B 54 7678-81
135. Kornitzer K et al 1999 Phys. Status Solidi b 216 5
136. Korona K P 2002 Phys. Rev. B 65 235312
137. Im J S, Moritz A, Steuber F, Haerle V, Scholz F and Hangleiter A 1997 Appl. Phys. Lett. 70 631-3
138. Kapolnek D, Keller S, Vetury R, Underwood R D, Kozodoy P, Denbaars S P and Mishra U K 1997 Appl. Phys. Lett. 71 1204
139. Nam H-O, Bremser M D, Ward B L, Nemanich R J and Davis R F 1997 Japan. J. Appl. Phys. 36 L532
140. Nam H-O, Bremser M D, Zheleva T S and Davis R F 1997 Appl. Phys. Lett. 71 2638
141. Marchand H, Wu X H, Ibbetson J P, Fini P T, Kozodoy P, Keller S, Speck J S, DenBaars S P and Mishra U K 1998 Appl. Phys. Lett. 73 747
142. Usui A, Sunakawa H, Sakai A and Yamaguchi A A 1997 Japan. Appl. Phys. Lett. 36 L899
143. Sakai A, Sunakawa H and Usui A 1997 Appl. Phys. Lett. 71 2259
144. Zheleva T S, Nam O-H, Ashmawi W M, Griffin J D and Davis R F 2001 J. Cryst. Growth 222 706
145. Zheleva T S, Karoui F, Kirchner K, Derenge M, Jones K A, Vispute R D and Venkatesan T 2001 Mater Res. Soc. Symp. Proc. 636 G5.1.1
146. Davis R F, Gehrke T, Linthicum K J, Preble E, Rajagopal P, Ronning C, Zorman C and Mehregany M 2001 J. Cryst. Growth 231 335
147. Beaumont B, Vennèguès P and Gibart P 2001 Reviews: epitaxial lateral overgrowth of GaN Phys. Status Solidi b 227 1-43 Special issue, Interface and defects at Atomic Level: http://www3.interscience.wiley.com/cgibin/issuetoc?ID=85510622
148. Gibart P. Beaumont B and Vennéguès P 2003 Epitaxial lateral overgrowth of GaN Nitride Semiconductors Handbook on Materials and Devices ed P Ruterana et al, pp 45-106
149. Shaw D W 1966 J. Electrochem. Soc. 113 904
150. McClelland R W, Bolzer C O and Fan J C C 1980 Appl. Phys. Lett. 37 560
151. Jastrzebski L 1983 J. Cryst. Growth 63 493-526
152. Kato Y, Kitamura S, Hiramatsu K and Sawaki N 1994 J. Cryst. Growth 144 133
153. Gibart P, Tromson-Carli A. Monteil Y and Rudra A 1989 J. Phys. 50 C5-529
154. Akasaka T, Kobayashi Y, Ando S and Kobayashi N 1997 Appl. Phys. Lett. 71 2196
155. Zhonghai Yu, Johnson M A L, Brown J D, El-Masrys N A, Muth J F. Cook J W Jr, Schetzina J F, Haberern K W. Kong H S and Edmond J A 1999 MRS Int. J. Nitride Semicond Res. 4S1 G4.3
156. Zheleva T S, Nam O-H, Bremser M D and Davis R F 1997 Appl. Phys. 71 2472
157. Kurai S, Nishino K and Sakai S 1997 Japan. Appl. Phys. Lett. 36 L184
158. Wang J, Tottori S, Sato H, Hao M-S, Ishikawa Y, Sugahara T, Yamashita K and Sakai S 1998 Japan. Appl. Phys. Lett. 37 4475
159. Beaumont B, Gibart P, Vaille M, Haffouz S, Nataf G and Bouillé A 1998 J. Cryst. Growth 189/190 97
160. Park J, Grudowski P A, Eiting C J and Dupuis R D 1998 Appl. Phys. Lett. 73 333
161. Nam O H, Zheleva T S, Bremser M D and Davis R F 1998 J. Electron. Mater. 27 233
162. Tadatomo K, Ohuchi Y, Okagawa H, Itoh H, Miyake H and Hiramatsu K 1999 MRS Int. J. Nitride Semicond. Res. 4S1 G3.1
163. Marchand H, Ibbetson J P, Fini P T, Wu X H, Keller S, DenBaars S P, Speck J Sand Mishra U K 1999 MRS Int. J. Nitride Semicond. Res. 4S1 G4.5
164. Hiramatsu K, Nishiyama K, Motogaito A, Miyake H, Iyechika Y and Maeda T 1999 Phys. Status Solidi a 176 535
165. Marchand H. Ibbetson J P, Fini P T, DenBaars S P, Speck J S and Mishra U K 1998 J. Cryst. Growth 195 328
166. Beaumont B, Vaille M, Nataf G, Bouillé A Guillaume J-C, Vennéguès P, Haffouz S and Gibart P 1998 MRS Int. J. Nitride Semicond. Res. 3 20
167. Beaumont B, Haffouz S and Gibart P 1998 Appl. Phys. Lett. 72 921
168. Beaumont B, Gibart P, Guillaume J C, Nataf G, Vaille M and Haffouz S 2001 US6325850
169. Haffouz S, Beaumont B and Gibart P 1998 MRS Int. J. Nitride Semicond. Res. 3 8
170. Zhang L, Tang H F and Kuech T F 2001 Appl. Phys. Lett. 79 3059
171. Zhang L, Tang H F, Schieke J, Mavrikakis M and Kuech T F 2002 J. Appl. Phys. 92 2304-9
172. Kawaguchi Y, Nambu S, Sone H, Yamaguchi M, Miyake H, Hiramatsu K, Sawaki N, Iyechika Y and Maeda T 1999 MRS Int. J. Nitride Semicond. Res. 4S1 G4.1
173. Kawaguchi Y, Nambu S, Yamaguchi M, Sawaki N, Miyake H, Hiramatsu K, Tsukamoto K, Kuwano N and Oki K 1999 Phys. Status Solidi a 176 561
174. Kawaguchi Y, Honda Y, Yamaguchi M, Sawaki N and Hiramatsu K 1999 Phys. Status Solidi a 176 553
175. Zhang X, Dapkus P D and Rich D H 2000 Appl. Phys. Lett. 77 1496
176. Fareed R S Q, Yang J W, Zhang J, Adivarahan V, Chaturvedi V and Khan M A 2000 Appl. Phys. Lett. 77 2343
177. Nitta S, Kashima T, Kariya M, Yukawa Y, Yamaguchi S, Amano H and Akasaki I 2000 MRS Int. J. Nitride Semicond. Res. 5S1 W2.8
178. Watanabe H, Kuroda N, Sunakawa H and Usui A 2000 Appl. Phys. Lett. 77 1786-8
179. Romanov A E, Fini P and Speck J S 2003 J. Appl. Phys. 93 106-14
180. Liliental-Weber Z, Benamara M, Swider W, Washburn J, Park J, Grudowski P A, Eiting C J and Dupuis R D 1999 MRS Int. J. Nitride Semicond. Res. 4S1 g4.6
181. Liliental-Weber Z and Chems D 2001 J. Appl. Phys. 89 7833
182. Hacke F, Domen K, Kuramata A, Tanahashi T and Ueda O 2001 Appl. Phys. Lett. 76 2547
183. Mitchell C C, Coltrin M E and Han J 2001 J. Cryst. Growth 222 144
184. Kobayashi K, Yamaguchi A A, Kimura S, Sunakawa H, Kimura A and Usui A 1999 Japan. Appl. Phys. Lett. 38 L611
185. Li X, Bishop S G and Coleman J J 1998 Appl. Phys. Lett. 73 1179
186. Zheleva, T S, Ashmawi W M, Nam O-H and Davis R F 1999 Appl. Phys. Lett. 74 2492
187. Kuwano N, Horichi K, Kagawa K, Nishimoto S and Sueyoshi M 2002 J. Cryst. Growth 237-239 1047
188. Asnin V M, Pollak F H, Ramer J, Schurman M and Ferguson I 1999 J. Appl. Phys. 75 1240
189. Florescu D I, Asnin V M, Pollak F H, Jones A M, Ramer J C, Schurman M J and Ferguson I 2000 Appl. Phys. Lett. 77 1464
190. Luo C-Y, Marchand H, Clarke D R and DenBaars S P 1999 Appl. Phys. Lett. 75 4151
191. Kawaguchi Y, Honda Y, Matsushima H, Yamaguchi M, Hiramatsu K and Sawaki N 1998 Japan. J. Appl. Phys. 37 L966
192. Kung P, Walker D, Hamilton M, Diaz J and Razeghi M 1999 Appl. Phys. Lett. 74 570
193. Mao Z, McKeman S, Carter B C, Yang W and McPherson S A 1999 MRS Int. J. Nitride Semicond. Res. 4S1 G3.13
194. Yang W, McPherson S A, Mao Z, McKerman S and Carter B 1999 J. Cryst. Growth 204 273
195. Tanaka S, Kawaguchi Y, Sawaki N, Hibino M and Hiramatsu K 2000 Appl. Phys. Lett. 76 2701
196. Honda Y, Kawaguchi Y, Ohtake Y, Tanaka S, Yamaguchi M and Sawaki N 2001 J. Cryst. Growth 230 346
197. Feltin E, Beaumont B, Vennéguès P, Vaiile M, Gibart P, Riemann T, Christen J, Dobos L and Pécz B 2003 J. Appl. Phys. 93 182-5
198. Tanaka S, Honda Y, Sawaki N and Hibino M 2001 Appl. Phys. Lett. 79 955
199. Smart J A, Chumbes E M, Schremer A T and Shealy J R 1999 Appl. Phys. Lett. 75 3820
200. Ashby C I H, Mitchell C C, Han J, Missert N A, Provencio P P, Follstaedt D M, Peake G M and Griego L 2000 Appl. Phys. Lett. 77 3233
201. Follstaedt D M, Provencio P P, Missert N A, Mitchell C C, Koleske D D, Alterman A A and Ashby C I H 2002 Appl. Phys. Lett. 81 2758-60
202. Katona T M, Craven M D. Fini P T, Speck J S and DenBaars S P 2001 Appl. Phys. Lett. 79 2907
203. Sano S, Detchprohm Th, Mochizuki S, Kamiyama S, Amano H and Akasaki I 2002 J. Cryst. Growth 235 129
204. Detchprohm Th, Yano M, Sano S, Nakamura R, Mochiduki S, Nakamura T, Amano H and Akasaki I 2001 Japan. J. Appl. Phys. 40 L16
205. Detchprohm T, Yano M, Nakamura R, Sano S, Mochiduki S, Nakamura T, Amano H and Akasaki I 2001 Mater. Res. Soc. Symp. Proc. 639 G5.7.1
206. Strittmatter A. Rodt S, Lßmann R, Bimberg D, Schröder H, Obermeier E, Riemann T, Christen J and Krost A 2001 Appl. Phys. Lett. 78 727
207. Zhang X, Li R R, Dapkus P D and Rich D H 2000 Appl. Phys. Lett. 77 2213
208. Nam O H, Zheleva T S, Bremser M D, Thomson D B and Davis R F 1998 Mater. Res. Soc. Symp. Proc. 482 301
209. Thomson D B, Gehrke T. Linthicum K J, Rapagopal P and Davis R F 1999 MRS Int. J. Nitride Semicond. Res. 4S1 G3.37
210. Linthicum K, Gehrke T, Thomson D, Carlson E, Rajagopal P, Smith T, Batchelor D and Davis R 1999 Appl. Phys. Lett. 75 196
211. Linthicum K J, Gehrke T, Thomson D B, Tracy K M, Carlson E P, Smith T P, Zheleva T S, Zorman C A, Mehregany M and Davis R F 1999 MRS Int. J. Nitride Semicond. Res. 4S1 G4.9
212. Gehrke T, Linthicum K J, Thomson D B, Rajagopal P. Batchelor A D and Davis R F 1999 MRS Int. J. Nitride Semicond Res. 4S1 G3.2
213. Zheleva T S, Smith S A, Thomson D B, Gehrke T, Linthicum K J, Rajagopal P, Carlson E, Ashmawi W M and Davis R F 1999 MRS Int. J. Nitride Semicond. Res. 4S1 G3.38
214. Davis R F, Gehrke T. Linthicum K J, Zheleva T S, Preble E A, Rajagopal P, Zorman C A and Mehregany M 2001 J. Cryst. Growth 225 L34-40
215. Davis R F et at 2001 MRS Int. J. Nitride Semicond. Res. 6 14
216. Kim I-H, Sone C, Nam O-H, Park Y-J and Kim T 1999 Appl. Phys. Lett. 75 4109
217. Sakai A, Sunakawa H and Usui A 1998 Appl. Phys. Lett. 73 481
218. Sakai A, Sunakawa H, Kimura A and Usui A 2000 Appl. Phys. Lett. 76 442
219. Gehrke T, Linthicum K J, Rajagopal P, Preble E A and Davis R F 2000 MRS Int. J. Nitride Semicond. Res. 5S1 W2.4
220. Gehrke T, Linthicum K J, Preble E, Rajagopal P, Ronning C, Zorman C, Mehregany M and Davis R F 2000 J. Electron. Mater. 29 306
221. Zheleva T S, Ashmawi W M and Jones K A 1999 Phys. Status Solidi a 176 545
222. Zheleva T S, Smith S A, Thomson D B, Linthicum K J, Rajagopal P, Davis R F 1999 J. Electron. Mater 28 L5
223. Einfeldt S, Roskowski A M, Preble E A and Davis R F 2002 Appl. Phys. Lett. 80 953
224. Roskowski A M, Miraglia P Q, Preble E A, Einfeldt S, Stiles T, Davis R F, Schuck J, Grober R and Schwarz U 2001 Phys. Status Solidi a 188 729-32
225. Chen Y, Schneider R and Wang S Y, Kern R S, Chen C H and Koo C P 1999 Appl. Phys. Lett. 75 2062
226. Kidoguchi I, Ishibashi A, Sugahara G and Ban Y 2000 Appl. Phys. Lett. 76 3768
227. Kidoguchi I, Ishibashi A, Sugahara G, Tsujimura A and Ban Y 2000 Japan. Appl. Phys. Lett. 39 L453
228. Ishibashi A, Kidoguchi I, Sugahara G and Ban Y 2002 J. Cryst. Growth 221 338
229. Davis R F, Nam O H, Zheleva T and Bremser M 1999 WO99/44224
230. Sugiura L, Ishikawa M, Nunoue S, Onomura M and Yamamoto M 2000 US 6015979
231. Vennéguès P, Beaumont B, Bousquet V, Vaille M, Gibart P 2000 J. Appl. Phys. 87 4175
232. Beaumont B, Bousquet V, Vennéguès P, Vaille M, Bouill Aé Gibart P, Dassonneville S, Amokrane A and Sieber B 1999 Phys. Status Solidi a 176 567
233. Bousquet V, Vennéguès P, Beaumont B, Vaille M and Gibart P 1999 Phys. Status Solidi b 216 691
234. Schwartz K W 1999 J. Appl. Phys. 85 108
235. Hiramatsu K, Nishiyama K, Onishi M, Mizutani H, Narukawa M, Motogaito A, Miyake H, Iyechika Y and Maeda T 2000 J. Cryst. Growth 221 316
236. Miyake H, Narukawa M, Hiramatsu K, Naoi H, Iyechika Y and Maeda T 2001 Phys. Status Solidi a 188 725-8
237. Horibuchi K, Kuwano N, Miyake H and Hiramatsu K 2002 J. Cryst. Growth 237-239 1070-4
238. Honda Y, Iyechika Y, Maeda T, Miyake H and Hiramatsu K 2001 Japan. Appl. Phys. Lett. 40 L309
239. Miyake H, Narukawa M, Hiramatsu K, Naoi H, Iyechika Y and Maeda T 2001 Phys. Status Solidi a 188 725
240. Hoffmann A and Eckey L 1998 Mater. Sci. Forum 264/268 1259
241. Hess S, Walraet F, Taylor R A, Ryan J F, Beaumont B and Gibart P 1998 Phys. Rev. B 58 R15973
242. Wraback M, Shen H, Eiting C J, Carrano J C and Dupuis R D 2000 MRS Int. J. Nitride Semicond. Res. 5S1 W11.55
243. Kuball M, Benyoucef M, Beaumont B and Gibart P 2001 J. Appl. Phys. 90 3956
244. Benyoucef M, Kuball M, Hill G, Wisnom M, Beaumont B and Gibart P 2001 Appl. Phys. Lett. 79 4127
245. Deleporte E, Gu Cénaud, Voos M, Beaumont B and Gibart P 2001 J. Appl. Phys. 89 1116
246. Nagahama S-i et at 2000 Japan. J. Appl. Phys. 39 L647
247. Miyake H, Mizutani H, Hiramatsu K, Iyechika Y, Honda Y and Maeda T 2001 Mater. Res. Symp. Proc. 639 G5.3.1
248. Beaumont B and Frayssinet E 2002 unpublished
249. Ishida M, Ogawa M, Orita K, Imafuji O, Yuri M, Sugino T and Itoh K 2000 J. Cryst. Growth 221 345
250. Cheong H S, Park C S, Hong C-H, Yi J H, Leem S J and Cho H K and Nam O-H 2002 Phys. Status Solidi c 0 550-3
251. Mathis S K, Romanov A E, Chen L F, Eltz G E, Pompe W and Speck J S 2001 J. Cryst. Growth 231 371-90
252. Lee K and Auh K 2001 MRS Int. J. Nitride Semicond. Res. 6 9
253. Morkoç H 2001 Mater. Sci. Eng. R 33 135
254. Phanse V M, Vaudo R P and Tischler M A 2002 US6440823
255. Free standing GaN grown at Lumilog, other characterisations available at http://www.lumilog.com
256. Frayssinet E et al 2000 Appl. Phys. Lett. 77 2551
257. Takeya M, Mizuno T, Sasaki T, Ikeda A, Fujimoto S, Ohfuji Y, Oikawa K, Yabuki Y, Uchida S and Ikeda M 2003 Phys. Status Solidi c 2292-5