Effect of buffer layers and stacking faults on the reduction of threading dislocation density in GaN overlayers grown by metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 89, Issue 5, 2001, Pages 2617-2621

  Cho, Hyung Koun ^a   Lee, Jeong Yong ^a   Kim, Ki Soo ^b   Yang, Gye Mo ^b   Song, Jae Ho ^c   Yu, Phil Won ^c  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Chonbuk National University   (South Korea)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000340924     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1344213     Document Type: Article

References (24)

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