Lateral epitaxy and dislocation density reduction in selectively grown GaN structures

Journal of Crystal Growth

Volumn 222, Issue 4, 2001, Pages 706-718

  Zheleva, Tsvetanka S ^a,b   Nam, Ok Hyun ^a   Ashmawi, Waeil M ^a   Griffin, Jason D ^a   Davis, Robert F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; MASKS; MORPHOLOGY; SEMICONDUCTOR GROWTH; SILICA; SILICON CARBIDE; STRESS RELAXATION;

BURGERS VECTOR; LATERAL EPITAXIAL OVERGROWTH; THERMAL EXPANSION COEFFICIENT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035251276     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00832-0     Document Type: Review

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