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Volumn 231, Issue 3, 2001, Pages 335-341

Conventional and pendeo-epitaxial growth of GaN(0 0 0 1) thin films on Si(1 1 1) substrates

(8) Davis, Robert F a Gehrke, Thomas a,b Linthicum, Kevin J a,b Preble, Edward a Rajagopal, Pradeep a,b Ronning, Carsten c Zorman, Christian d Mehregany, Mehran d

a North Carolina State University (United States)

b NITRONEX CORPORATION (United States)

c UNIVERSITY OF GÖTTINGEN (Germany)

d Case Western Reserve University (United States)

Author keywords

A1. Characterization; A1. Defects; A1. Dislocations; A1. X ray diffraction; A2. Selective growth; A3. Metalorganic chemical vapor deposition; A3. Metalorganic vapor phase epitaxy; A3. Pendeoepitaxy; B1. Gallium compounds; B1. Nitrides; B1. Silicon; B2. Semiconducting gallium compounds; B3. Scanning electron microscopy; B3. Transmission electron microscopy

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; MASKS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION (APCVD); PNEDEO-EPITAXY (PE);

SEMICONDUCTING FILMS;

EID: 0035480370 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01462-2 Document Type: Conference Paper

Times cited : (41)

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