Control of crystalline quality of MOVPE-grown GaN and (Al,Ga)N/AlGaN MQW using In-doping and/or N2 carrier gas

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 327-333

  Yamaguchi, S ^a   Kariya, M ^a   Nitta, S ^a   Kashima, T ^a   Kosaki, M ^a   Yukawa, Y ^a   Amano, H ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; ISOELECTRONIC;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034514006     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00708-9     Document Type: Article

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