Heteroepitaxial lateral overgrowth of GaN on periodically grooved substrates: A new approach for growing low-dislocation-density GaN single crystals

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 1 A/B, 2001, Pages

  Detchprohm, Theeradetch ^a   Yano, Masahiro ^a   Sano, Shigekazu ^a   Nakamura, Ryo ^a   Mochiduki, Shingo ^a   Nakamura, Tetsuya ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

GaN; Heteroepitaxial lateral overgrowth; Low dislocation density; Periodically grooved substrate; Sapphire; Si; SiC

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; SAPPHIRE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES;

DISLOCATION DENSITY; HETEROEPITAXIAL LATERAL OVERGROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035862480     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l16     Document Type: Article

References (13)