Influence of thermal annealing on GaN buffer layers and the property of subsequent GaN layers grown by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 A, 1999, Pages 649-653

  Ito, Takahiro ^a   Sumiya, Masatomo ^a   Takano, Yasushi ^a   Ohtsuka, Kohji ^b   Fuke, Shunro ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b SANKEN ELECTRIC CO LTD   (Japan)

Author keywords

Buffer layer; Crystallinity; GaN; MOCVD; Surface morphology; Thermal annealing

Indexed keywords

EID: 0001663823     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.649     Document Type: Article

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