Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

Applied Physics Letters

Volumn 81, Issue 11, 2002, Pages 1940-1942

  Koleske, D D ^a   Fischer, A J ^a   Allerman, A A ^a   Mitchell, C C ^a   Cross, K C ^a   Kurtz, S R ^a   Figiel, J J ^a   Fullmer, K W ^a   Breiland, W G ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3D NUCLEATION; GAN FILM; GAN LIGHT-EMITTING DIODES; HIGH-TEMPERATURE GROWTH; LIGHT OUTPUT; OUTPUT POWER; RECOVERY TIME; REFLECTANCE SIGNALS; REFLECTED LIGHT INTENSITY; THREE-DIMENSIONAL (3D) GRAINS; ULTRAVIOLET LIGHT EMITTING DIODES;

COALESCENCE; GALLIUM NITRIDE; GRAIN GROWTH; LIGHT EMISSION; NUCLEATION; SAPPHIRE; THREE DIMENSIONAL; ULTRAVIOLET RADIATION;

LIGHT EMITTING DIODES;

EID: 79955993717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506793     Document Type: Article

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