Direct evidence that dislocations are non-radiative recombination centers in GaN

Japanese Journal of Applied Physics

Volumn 37, Issue 4A, 1998, Pages L398-L400

  Sugahara, Tomoya ^a   Sato, Hisao ^a   Hao, Maosheng ^a   Naoi, Yoshiki ^a   Kurai, Satoshi ^a   Tottori, Satoru ^a   Yamashita, Kenji ^a   Nishino, Katsushi ^a   Romano, Linda T ^a   Sakai, Shiro ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

CL dark spot; Dislocation; GaN; Heteroepitaxy; Homoepitaxy; Non radiative recombination

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE;

CATHODOLUMINESCENCE IMAGES; DARK SPOTS; HOLE DIFFUSION LENGTH; HOMO EPITAXIES; MINORITY CARRIER DIFFUSION LENGTH; NON-RADIATIVE RECOMBINATIONS; SAPPHIRE SUBSTRATES; TEM OBSERVATIONS;

GALLIUM NITRIDE;

EID: 85042807979     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/jjap.37.l398     Document Type: Article

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