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Applied Physics Letters

Volumn 72, Issue 6, 1998, Pages 704-706

A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy

(4) Kachi, Tetsu a Tomita, Kazuyoshi a Itoh, Kenji a Tadano, Hiroshi a

a Rd Management Section (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000817340 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.120851 Document Type: Article

Times cited : (52)

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