Selective-area and lateral epitaxial overgrowth of III-N materials by metal organic chemical vapor deposition

Applied Physics Letters

Volumn 73, Issue 3, 1998, Pages 333-335

  Park, J ^a   Grudowski, P A ^a   Eiting, C J ^a   Dupuis, R D ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001358565     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121825     Document Type: Review

References (11)

1. B. D. Joyce and J. A. Bradley, Nature (London) 195, 458 (1962).
2. For recent work on SAE by MOCVD, see articles in "Section X: Selective Area Epitaxy," in the Proceedings of the Eighth International Conf. on Metalorganic Vapor Phase Epitaxy, J. Cryst. Growth 170, (1997).
3. See A. D. Morrison and T. Daud, US Patent No. 04522661, for a discussion of the application of SALEO to the growth of high-purity semiconductors.
4. R. F. Davis, Invited Paper at Gordon Conference on Electronic Materials: Chemistry, Excitations, and Processing, Henniker, New Hampshire, (July 6-11, 1997) (unpublished).
5. O. H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, Appl. Phys. Lett. 71, 2638 (1997).
6. T. S. Zheleva, O. H. Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 71, 2472 (1997).
7. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Appl. Phys. Lett. 72, 211 (1998).
8. S. Nakamura, Paper Plenary 1, presented at the 24th International Symposium on Compound Semiconductors, San Diego CA, 8-11 September 1997.
9. P. A. Grudowski, C. J. Eiting, J. Park, B. S. Shelton, D. J. H. Lambert, and R. D. Dupuis, Appl. Phys. Lett. 71, 1537 (1997).
10. D. Coronell and K. Jensen, J. Cryst. Growth 114, 581 (1991).
11. J. Park, P. A. Grudowski, C. J. Eiting, R. D. Dupuis, and Z. Liliental-Weber (unpublished).