Selective area growth of GaN on stripe-patterned (111)Si substrate by metalorganic vapor phase epitaxy

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 553-556

  Kawaguchi, Y ^a   Honda, Y ^a   Yamaguchi, M ^a   Sawaki, N ^a   Hiramatsu, K ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES;

FULL WIDTH AT HALF MAXIMUM (FWHM); GALLIUM NITRIDE; SELECTIVE AREA GROWTH (SAG);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221997     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<553::AID-PSSA553>3.0.CO;2-I     Document Type: Article

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