Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy

Journal of Materials Research

Volumn 11, Issue 4, 1996, Pages 1011-1018

  Weeks Jr , T Warren ^a   Bremser, Michael D ^a   Ailey, K Shawn ^a   Carlson, Eric ^a   Perry, William G ^a   Piner, Edwin L ^a   El Masry, Nadia A ^a   Davis, Robert F ^a  

^a Campus Box 7908   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRON ENERGY LEVELS; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; RESIDUAL STRESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; THIN FILMS;

ALUMINUM NITRIDE; BUFFER LAYERS; DOUBLE CRYSTAL X RAY ROCKING CURVE MEASUREMENTS; GALLIUM NITRIDE; MONOCRYSTALLINE;

SEMICONDUCTING FILMS;

EID: 0030126199     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1996.0126     Document Type: Article

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