Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy

Journal of Materials Research

Volumn 11, Issue 4, 1996, Pages 1011-1018

  Weeks Jr , T Warren ^a   Bremser, Michael D ^a   Ailey, K Shawn ^a   Carlson, Eric ^a   Perry, William G ^a   Piner, Edwin L ^a   El Masry, Nadia A ^a   Davis, Robert F ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; ELECTRON ENERGY LEVELS; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; RESIDUAL STRESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; THIN FILMS;

ALUMINUM NITRIDE; BUFFER LAYERS; DOUBLE CRYSTAL X RAY ROCKING CURVE MEASUREMENTS; GALLIUM NITRIDE; MONOCRYSTALLINE;

SEMICONDUCTING FILMS;

EID: 0030126199     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1996.0126     Document Type: Article

References (34)

1. M. A. Haase, J. Qui, J. M. DePuydt, and H. Cheng, Appl. Phys. Lett. 59, 1272 (1991).
2. H. Jeon, J. Ding, A. V. Nurmikko, W. Xie, D. C. Grillo, M. Kobayashi, R. L. Gunshor, G. C. Hua, and N. Otsuka, Appl. Phys. Lett. 60, 2045 (1992).
3. W. Xie, D. C. Grillo, R. L. Gunshor, M. Kobayashi, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, and N. Otsuka, Appl. Phys. Lett. 60, 1999 (1992).
4. S. Strite and M. Morkoc, J. Vac. Sci. Technol. B 10, 1237 (1992).
5. M. Gershenzon, D. E. Wang, and L. Ta, in Proceedings 1981 International Optoelectronics Workshop, Tainan, Taiwan, December 1981, edited by D. Y. Chang (National Cheng Kung University, Tainan, Taiwan), p. 139.
6. R. F. Davis, Physica B 185, 1 (1993).
7. S. Yoshida, S. Misawa, and S. Gonda, Appl. Phys. Lett. 42, 427 (1983).
8. S. Yoshida, S. Misawa, and S. Gonda, J. Vac. Sci. Technol. B 1, 250 (1983).
9. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
10. H. Amano, I. Akasaki, K. Hiramatsu, N. Koide, and N. Sawaki, Thin Solid Films 163, 415 (1988).
11. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, and N. Sawaki, J. Cryst. Growth 98, 209 (1989).
12. M. A. Khan, J. N. Kuznia, D. T. Olson, and R. Kaplan, J. Appl. Phys. 73, 3108 (1993).
13. J. N. Kuznia, M. A. Khan, D. T. Olson, R. Kaplan, and J. Freitas, J. Appl. Phys. 73, 4700 (1993).
14. W. Qian, M. Skowronski, M. De Graef, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Appl. Phys. Lett. 66, 1252 (1995).
15. K. Hiramatsu, S. Itoh, H. Amano, I. Akaski, N. Kuwano, T. Shiraishi, and K. Oki, J. Cryst. Growth 115, 628 (1991).
16. S. Nakamura, Jpn. J. Appl. Phys. 30, L1705 (1991).
17. N. Kuwano, T. Shiraishi, A. Koga, K. Oki, K. Hiramatsu, H. Amano, K. Itoh, and I. Akasaki, J. Cryst. Growth 115, 381 (1991).
18. A. A. Chernov, Modern Crystallography III: Crystal Growth (Springer, Berlin, 1984), p. 283.
19. S. Nakamura, Jpn. J. Appl. Phys. 30, 1620 (1991).
20. A. E. Wickenden, D. K. Wickenden, and T. J. Kistenmacher, J. Appl. Phys. 75, 5367 (1994).
21. D. K. Wickenden, J. A. Miragliotta, W. A. Bryden, and T. J. Kistenmacher, J. Appl. Phys. 75, 7585 (1994).
22. R. C. Powell, G. A. Tomasch, Y-W. Kim, J. A. Thornton, and J. E. Greene, in Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by J. T. Glass, R. Messier, and N. Fujimori (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990), p. 525.
23. P. J. Born and D. S. Robertson, J. Mater. Sci. 15, 30 003 (1980).
24. K. Matsubara and T. Takagi, Jpn. J. Appl. Phys. 22, 511 (1982).
25. Z. Sitar, M. J. Paisley, B. Yan, and R. F. Davis, in Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors, edited by J. T. Glass, R. Messier, and N. Fujimori (Mater. Res. Soc. Symp. Proc. 162, Pittsburgh, PA, 1990), p. 537.
26. Cree Research, Inc., 2810 Meridian Parkway, Suite 176, Durham, NC 27713.
27. T. W. Weeks, Jr, M. D. Bremser, K. S. Alley, E. Carlson, W. G. Perry, and R. F. Davis (unpublished).
28. T. W. Weeks, Jr., M. D. Bremser, K. S. Ailey, E. Carlson, W. G. Perry, L. L. Smith, J. A. Freitas, Jr., and R. F. Davis, Second Nitride Workshop, St. Louis, MO, October 17-18 (1994).
29. S. Tanaka, R. S. Kern, and R. F. Davis, Appl. Phys. Lett. 66, 37 (1995).
30. T. W. Weeks, Jr., D. W. Kum, E. Carlson, W. G. Perry, K. S. Ailey, and R. F. Davis, Second International High Temperature Electronics Conference, Charlotte, NC, June 5-10 (1994).
31. R. Dingle, D. D. Sell, S. E. Stokowski, and M. Ilegems, Phys. Rev. B 4, 1211 (1971).
32. N. V. Edwards, T. W. Weeks, Jr., M. D. Bremser, H. Liu, R. A. Stall, R. F. Davis, and D. E. Aspnes, Materials Research Society Spring Meeting, San Francisco, CA, April 17-20 (1995).
33. W. Götz, N. M. Johnson, R. A. Street, H. Amano, and I. Akasaki, Appl. Phys. Lett. 66, 1340 (1995).
34. S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys. 31, L139 (1992).