The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2304-2309

  Zhang, L ^a   Tang, H F ^a   Schieke, J ^a   Mavrikakis, M ^a   Kuech, T F ^a  

^a University of Wisconsin Madison ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FACET FORMATION; GAN EPILAYERS; GAN GROWTH; GASPHASE; GROWTH PARAMETERS; ISOELECTRONIC CENTERS; LATERAL EPITAXY; LATERAL OVERGROWTH; LOW LEVEL; METAL-ORGANIC VAPOR PHASE EPITAXY; MOLE RATIO; STRUCTURE AND PROPERTIES; SURFACE CONDITIONS; SURFACE STOICHIOMETRY; V/III RATIO;

EPILAYERS; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; STOICHIOMETRY; SURFACE ACTIVE AGENTS; VAPORS;

GALLIUM NITRIDE;

EID: 0036735483     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495891     Document Type: Article

References (32)

1. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986). apl APPLAB 0003-6951
2. S. Nakamura, Jpn. J. Appl. Phys., Part 2 30, L1705 (1991). jjc JAPLD8 0021-4922
3. M. Nam, D. Bremser, T. S. Zheleva, and R. F. Davis, Appl. Phys. Lett. 71, 2638 (1997). apl APPLAB 0003-6951
4. H. Matsushima, M. Yamaguchi, K. Hiramatsu, and Sawaki, Proceedings of the 2nd International Conference on Nitride Semiconductors, Tokushima, Japan, 1997, p. 492.
5. P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. Keller, J. S. Speck, S. P. Denbaars, and U. K. Mishra, Appl. Phys. Lett. 73, 975 (1998). apl APPLAB 0003-6951
6. H. Sasaoka, H. Sunakwa, A. Kimura, M. Nido, A. Usui, and A. Sakai, J. Cryst. Growth 189-190, 61 (1998). jcr JCRGAE 0022-0248
7. K. J. Linthicum, T. Gehrke, D. B. Thomson, K. M. Tracy, E. P. Carlson T. P. Smith, T. S. Zheleva, C. A. Zorman, M. Mehregany, and R. F. Davis, MRS Internet J. Nitride Semicond. Res. 4S1, G4.9 (1999). mrj MIJNF7 1092-5783
8. M. Copel, M. C. Reuter, M. Horn von Hoegen, and R. M. Tromp, Phys. Rev. B 42, 11682 (1990). prb PRBMDO 0163-1829
9. K. Sakamoto, H. Matsuhata, K. Kyoya, K. Iki, and T. Sakamoto, Jpn. J. Appl. Phys., Part 1 33, 2307 (1994). jjb JAPNDE 0021-4922
10. T. Schmidt, J. Falta, G. Materlik, J. Zeysing, G. Falkenberg, and R. L. Johnson, Appl. Phys. Lett. 74, 1391 (1999). apl APPLAB 0003-6951
11. M. Copel, M. C. Reuter, E. Kaxiras, and R. M. Tromp, Phys. Rev. Lett. 63, 632 (1989). prl PRLTAO 0031-9007
12. X. Yang, M. J. Jurkovic, J. B. Heroux, and W. I. Wang, Appl. Phys. Lett. 75, 178 (1999). apl APPLAB 0003-6951
13. H. Shimizu, K. Kumada, S. Uchiyana, and A. Kasukawa, IEEE J. Sel. Top. Quantum Electron. 17, 355 (2001). isq IJSQEN 1077-260X
14. T. Paskova, E. Valcheva, and R. Yakimova, J. Vac. Sci. Technol. B 14, 1729 (1996). jvb JVTBD9 0734-211X
15. T. Takayama, M. Yuri, K. Itoh, and J. S. Harris, Jr., J. Appl. Phys. 90, 2358 (2001). jap JAPIAU 0021-8979
16. W. M. Jadwisienczak and H. J. Lozykowski, Mater. Res. Soc. Symp. Proc. 482, 1033 (1998). mrs MRSPDH 0272-9172
17. L. Zhang, H. F. Tang, J. Schieke, M. Mavrikakis, and T. F. Kuech (unpublished).
18. L. Zhang, H. F. Tang, and T. J. Kuech, Appl. Phys. Lett. 79, 3059 (2001). apl APPLAB 0003-6951
19. B. Voigtlander, A. Zinner, T. Weber, and H. P. Bonzel, Phys. Rev. B 51, 7583 (1995). prb PRBMDO 0163-1829
20. E. Kaxiras, Mater. Sci. Eng., B 30, 175 (1995). msb MSBTEK 0921-5107
21. E. Kaxiras and D. Kandel, Appl. Surf. Sci. 102, 3 (1996). asu ASUSEE 0169-4332
22. I. Markov, Phys. Rev. B 50, 11271 (1994). prb PRBMDO 0163-1829
23. D. Kandel and E. Kaxiras, Phys. Rev. Lett. 75, 2742 (1995). prl PRLTAO 0031-9007
24. J. Neugebauer, T. Zywietz, M. Scheffler, and J. Northrup, Appl. Surf. Sci. 159-160, 355 (2000). asu ASUSEE 0169-4332
25. J. Schieke, M. Mavrikakis, and T. F. Kuech (unpublished).
26. T. Zywietz, J. Neugebauer, and M. Scheffler, Appl. Phys. Lett. 73, 487 (1998). apl APPLAB 0003-6951
27. C. W. Pei, B. Turk, J. B. Héroux, and W. I. Wang, J. Vac. Sci. Technol. B 19, 1426 (2001). jvb JVTBD9 0734-211X
28. E. Calleja, F. J. Sanchez, D. Basak, M. A. Sanchez-Garcia, E. Munoz, I. Izpura, F. Calle, J. M. G. Tijero, J. L. Sanchez-Rojas, B. Beaumont, P. Lorenzini, and P. Gibart, Phys. Rev. B 55, 4689 (1997). prb PRBMDO 0163-1829
29. J. Neugebauer and C. G. Van de Walle, Appl. Phys. Lett. 69, 503 (1996). apl APPLAB 0003-6951
30. X. Zhang, P. Kung, D. Walker, A. Saxler, and M. Razeghi, Mater. Res. Soc. Symp. Proc. 395, 625 (1996). mrs MRSPDH 0272-9172
31. R. Zhang and T. F. Kuech, J. Electron. Mater. 27, L35 (1998). jem JECMA5 0361-5235
32. R. Zhang and T. F. Kuech, Mater. Res. Soc. Symp. Proc. 482, 709 (1998). mrs MRSPDH 0272-9172