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Journal of Applied Physics

Volumn 83, Issue 7, 1998, Pages 3656-3659

Scattering of electrons at threading dislocations in GaN

(5) Weimann, Nils G a Eastman, Lester F a Doppalapudi, Dharanipal b Ng, Hock M b Moustakas, Theodore D b

a School of Operations Research and Industrial Engineering (United States)

b Boston University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CHARGED DISLOCATION LINES; CHARGED TRAPS; COULOMB SCATTERING CENTERS;

ELECTRON SCATTERING;

EID: 0032048780 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.366585 Document Type: Article

Times cited : (643)

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