Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

Applied Physics Letters

Volumn 75, Issue 24, 1999, Pages 3820-3822

  Smart, J A ^a   Chumbes, E M ^a   Schremer, A T ^a   Shealy, J R ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000239636     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125467     Document Type: Article

References (9)

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