High-power and long-lifetime InGaN multi-quantum-well laser diodes grown on low-dislocation-density GaN substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 7 A, 2000, Pages

  Nagahama, Shin ichi ^a   Iwasa, Naruhito ^a   Senoh, Masayuki ^a   Matsushita, Toshio ^a   Sugimoto, Yasunobu ^a   Kiyoku, Hiroyuki ^a   Kozaki, Tokuya ^a   Sano, Masahiko ^a   Matsumura, Hiroaki ^a   Umemoto, Hitoshi ^a   Chocho, Kazuyuki ^a   Mukai, Takashi ^a  

^a NICHIA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; EPITAXIAL GROWTH; HIGH POWER LASERS; MASKS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICA; SUBSTRATES;

INDIUM GALLIUM NITRIDE; LATERAL OVERGROWTH; THREADING DISLOCATION DENSITY;

QUANTUM WELL LASERS;

EID: 0034230128     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l647     Document Type: Article

References (14)