Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 7 B, 1997, Pages

  Usui, Akira ^a   Sunakawa, Haruo ^a   Sakai, Akira ^a   Yamaguchi, A Atsushi ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; CRYSTALS; DISLOCATIONS (CRYSTALS); SAPPHIRE; SEMICONDUCTOR GROWTH; SUBSTRATES; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY; SELECTIVE GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031187047     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l899     Document Type: Article

References (14)