Nitrogen radical densities during GaN growth by molecular beam epitaxy, plasma-assisted metalorganic chemical vapor deposition, and conventional metalorganic chemical vapor deposition

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 223-226

  Sato, Michio ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PLASMA SOURCES; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR GROWTH; SUBSTRATES;

NITROGEN RADICALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031077190     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00171-2     Document Type: Article

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