Pendeo-epitaxy versus lateral epitaxial overgrowth of GaN: A comparative study via finite element analysis

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 545-551

  Zheleva, T S ^a   Ashmawi, W M ^b   Jones, K A ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTALLOGRAPHY; FINITE ELEMENT METHOD; INTERFACES (MATERIALS); MASKS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; SEMICONDUCTOR GROWTH; STRAIN; STRESS CONCENTRATION; THERMAL EXPANSION; THERMAL STRESS;

EPITAXIAL LATERAL OVERGROWTH (ELO); GALLIUM NITRIDE; PENDEO-EPITAXY (PE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221959     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<545::AID-PSSA545>3.0.CO;2-E     Document Type: Article

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