InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

Applied Physics Letters

Volumn 72, Issue 2, 1998, Pages 211-213

  Nakamura, Shuji ^a   Senoh, Masayuki ^a   Nagahama, Shin Ichi ^a   Iwasa, Naruhito ^a   Yamada, Takao ^a   Matsushita, Toshio ^a   Kiyoku, Hiroyuki ^a   Sugimoto, Yasunobu ^a   Kozaki, Tokuya ^a   Umemoto, Hitoshi ^a   Sano, Masahiko ^a   Chocho, Kazuyuki ^a  

^a NICHIA CORPORATION   (Japan)

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Indexed keywords

EID: 0043100979     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120688     Document Type: Article

References (12)

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