High quality GaN grown by MOVPE

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 316-320

  Beaumont, B ^a   Vaille, M ^a   Boufaden, T ^b   El Jani, B ^b   Gibart, P ^a  

^a CRHEA CNRS   (France)

^b FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030646397     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00635-5     Document Type: Article

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