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Applied Physics Letters

Volumn 75, Issue 26, 1999, Pages 4109-4111

Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate

(5) Kim, Ig Hyeon a Sone, C a Nam, Ok Hyun a Park, Yong Jo a Kim, Taeil a

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000478464 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.125552 Document Type: Article

Times cited : (49)

References (10)

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