Nitridation process of sapphire substrate surface and its effect on the growth of GaN

Journal of Applied Physics

Volumn 79, Issue 7, 1996, Pages 3487-3491

  Uchida, K ^a   Watanabe, A ^a   Yano, F ^a   Kouguchi, M ^a   Tanaka, T ^a   Minagawa, S ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000326438     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361398     Document Type: Article

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