Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 217, Issue 1, 2000, Pages 65-81

  Theodoropoulos, C ^a   Mountziaris, T J ^a   Moffat, H K ^b   Han, J ^b  

^a the State University of New York   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; COMPUTER SIMULATION; CONDENSATION; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; PARALLEL PROCESSING SYSTEMS; REACTION KINETICS; ROTATING DISKS; SEMICONDUCTING GALLIUM COMPOUNDS; SENSITIVITY ANALYSIS;

AXISYMMETRIC GAS INLETS; GALLIUM NITRIDE; GAS PHASE CONDENSATION REACTIONS; MASSIVELY PARALLEL COMPUTATIONS; VERTICAL STAGNATION FLOW REACTOR;

FILM GROWTH;

EID: 0034225666     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00402-4     Document Type: Article

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