CW operation of AlGaInN-GaN laser diodes

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 23-30

  Asano, T ^a   Yanashima, K ^a   Asatsuma, T ^a,b   Hino, T ^a   Yamaguchi, T ^a,b   Tomiya, S ^a   Funato, K ^a,b   Kobayashi, T ^a,b   Ikeda, M ^a  

^a SONY CORPORATION   (Japan)

^b Semiconductor Company   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CRYSTALLIZATION; CURRENT DENSITY; DENSITY (OPTICAL); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; OPTICAL PUMPING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THRESHOLD VOLTAGE;

ALUMINUM GALLIUM INDIUM NITRIDE; GALLIUM NITRIDE;

SEMICONDUCTOR LASERS;

EID: 0033221735     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<23::AID-PSSA23>3.0.CO;2-G     Document Type: Article

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