Hydrogen and nitrogen ambient effects on epitaxial lateral overgrowth (ELO) of GaN via metalorganic vapor-phase epitaxy (MOVPE)

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Tadatomo, Kazuyuki ^a   Ohuchi, Yoichiro ^a   Okagawa, Hiroaki ^a   Itoh, Hirotaka ^a   Miyake, Hideto ^b,b   Hiramatsu, Kazumasa ^b  

^a Mitsubishi Cable Industries Ltd   (Japan)

^b MIE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTIES; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; EPITAXIAL LATERAL GROWTH (ELO); GROWTH TEMPERATURE; LATERAL OVERGROWTH RATE;

GALLIUM NITRIDE;

EID: 3442882016     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300002325     Document Type: Conference Paper

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