Epitaxial lateral overgrowth and other approaches for low-defect-density GaN/sapphire

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 83 CR, Issue , 2002, Pages 112-139

  Gibart, Pierre ^a   Beaumont, Bernard ^a  

^a CNRS   (France)

Author keywords

Defects; Epitaxial lateral overgowth; Gallium nitride; Substrates

Indexed keywords

CHEMICAL MODIFICATION; COALESCENCE; DENSITY (SPECIFIC GRAVITY); DIELECTRIC MATERIALS; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; GRAIN BOUNDARIES; LASER BEAM EFFECTS; MASKS; SAPPHIRE; SUBSTRATES; DEFECT DENSITY; DEFECTS; DEPOSITION; ENERGY GAP; EPITAXIAL GROWTH; LIGHT SOURCES; NITRIDES; STRAIN; TEMPERATURE;

EPITAXIAL LATERAL OVERGROWTH (ELO); SELECTIVE AREA EPITAXY (SAE); THREADING DISLOCATIONS (TD);

EPITAXIAL GROWTH; GALLIUM COMPOUNDS;

DEEP ELECTRON TRAPS; DIGITAL VERSATILE DISKS; EPITAXIAL LATERAL OVERGOWTH; EPITAXIAL LATERAL OVERGROWTH; IMPURITY INCORPORATION; LOW DEFECT DENSITIES; SELECTIVE AREA EPITAXY; THREADING DISLOCATION;

EID: 1542439133     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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