Effects of nitridation on properties of GaN grown on sapphire substrate by metal-organic chemical vapour deposition

Semiconductor Science and Technology

Volumn 14, Issue 6, 1999, Pages 557-560

  Kim, K S ^a   Lim, K Y ^a   Lee, H J ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; NITRIDING; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES; X RAY DIFFRACTION ANALYSIS;

FULL-WIDTH AT HALF-MAXIMUM (FWHM); GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032655151     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/6/311     Document Type: Article

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