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Volumn 77, Issue 14, 2000, Pages 2213-2215

Direct lateral epitaxy overgrowth of GaN on sapphire substrates based on a sparse GaN nucleation technique

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000212212     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1312255     Document Type: Article
Times cited : (17)

References (16)
  • 1
    • 0002835692 scopus 로고
    • F. A. Ponce, MRS Bull. 22(2), 51 (1947).
    • (1947) MRS Bull. , vol.22 , Issue.2 , pp. 51
    • Ponce, F.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.