The formation of GaN dots on AlxGa1-xN surfaces using Si in gas-source molecular beam epitaxy

Applied Physics Letters

Volumn 72, Issue 3, 1998, Pages 344-346

  Shen, Xu Qiang ^a   Tanaka, Satoru ^a   Iwai, Sohachi ^a   Aoyagi, Yoshinobu ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001422564     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120731     Document Type: Article

References (11)

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