Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 316-326

  Hiramatsu, Kazumasa ^a   Nishiyama, Katsuya ^a   Onishi, Masaru ^a   Mizutani, Hiromitsu ^a   Narukawa, Mitsuhisa ^a   Motogaito, Atsushi ^a   Miyake, Hideto ^a   Iyechika, Yasushi ^b   Maeda, Takayoshi ^b  

^a MIE UNIVERSITY   (Japan)

^b SUMITOMO CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COALESCENCE; DISLOCATIONS (CRYSTALS); FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS;

FACET-CONTROLLED EPITAXIAL LATERAL OVERGROWTH (FACELO); GALLIUM NITRIDE; GROWTH PIT DENSITY (GPD) METHOD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034497117     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00707-7     Document Type: Article

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