Reduction of etch pit density in organometallic vapor phase epitaxy-grown GaN on sapphire by insertion of a low-temperature-deposited buffer layer between high-temperature-grown GaN

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 37, Issue 3 B, 1998, Pages

  Iwaya, Motoaki ^a   Takeuchi, Tetsuya ^a   Yamaguchi, Shigeo ^a   Wetzel, Christian ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DISLOCATIONS (CRYSTALS); ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SAPPHIRE;

ETCH PIT DENSITY; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032023331     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.l316     Document Type: Article

References (27)