Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 12 B, 1996, Pages

  Wu, X H ^a   Fini, P ^a   Keller, S ^a   Tarsa, E J ^a   Heying, B ^a   Mishra, U K ^a   DenBaars, S P ^a   Speck, J S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NUCLEATION; PHOTOLUMINESCENCE; SAPPHIRE; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY; WETTING;

FACET; NUCLEATION LAYER;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030415208     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l1648     Document Type: Article

References (9)