Organometallic vapor phase lateral epitaxy of low defect density GaN layers

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 301-306

  Nam, O H ^a   Zheleva, T S ^a   Bremser, M D ^a   Thomson, D B ^a   Davis, R F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; INTERFACES (MATERIALS); MASKS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SILICA; SUBSTRATES;

GALLIUM NITRIDE; LATERAL EPITAXIAL OVERGROWTH (LEO);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031343722     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-301     Document Type: Conference Paper

References (9)