Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on α(6H)-SiC substrates

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 238-245

  Hanser, A D ^a   Wolden, C A ^b   Perry, W G ^a   Zheleva, T ^a   Carlson, E P ^a   Banks, A D ^a   Therrien, R J ^a   Davis, R F ^a  

^a North Carolina State University   (United States)

^b Department of Geology and Geological Engineering   (United States)

Author keywords

AlN; Diluent; Doping; GaN; Metalorganic vapor phase epitaxy (MOVPE); Photoluminescence (PL); Reactor modeling

Indexed keywords

EID: 0007070993     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0394-7     Document Type: Article

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