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Volumn 273-274, Issue , 1999, Pages 24-32

The role of threading dislocations in the physical properties of GaN and its alloys

Author keywords

Carrier scattering; Deep levels; Extended defects; Gallium nitride; Leakage; Non radiative recombination; Threading dislocations; Traps

Indexed keywords

DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); ELECTRON SCATTERING; ELECTRON TRAPS; ENERGY GAP; LEAKAGE CURRENTS; LIGHT EMISSION; PHYSICAL PROPERTIES; SEMICONDUCTOR DOPING;

EID: 0033344436     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00399-3     Document Type: Article
Times cited : (219)

References (39)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.