Origin of the nonradiative 〈1120〉 line defect in lateral epitaxy-grown GaN on SiC substrates

Applied Physics Letters

Volumn 76, Issue 18, 2000, Pages 2547-2549

  Hacke, P ^a   Domen, K ^a   Kuramata, A ^a   Tanahashi, T ^a   Ueda, O ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006277605     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126404     Document Type: Article

References (10)

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