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Volumn 235, Issue 1-4, 2002, Pages 129-134

Low-dislocation-density GaN and AlxGa1-xN (x≤0.13) grown on grooved substrates

(6) Sano, Shigekazu a Detchprohm, Theeradetch a Mochizuki, Shingo a Kamiyama, Satoshi a Amano, Hiroshi a Akasaki, Isamu a

a MEIJO UNIVERSITY (Japan)

Author keywords

A1. Doping; A1. Low dislocation density; A3. Metalorganic vapor phase epitaxy; A3. Periodically grooved substrates; B1. Nitrides

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES;

GROOVED SUBSTRATES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036467189 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01838-3 Document Type: Article

Times cited : (11)

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