Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 301-304

  Moran, B ^a   Hansen, M ^a   Craven, M D ^a   Speck, J S ^a   DenBaars, S P ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES;

GALLIUM NITRIDE;

FILM GROWTH;

EID: 0034497858     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00704-1     Document Type: Article

References (9)

1. Lahrèche H., Vennéguès P., Vaille M., Beaumont B., Laügt M., Lorenzini P., Gibart P. Semicond. Sci. Technol. 14:1999;L33.
2. Doverspike K., Bulman G.E., Sheppard S.T., Horino K., Kong H.S., Leonard M., Dieringer H., Weeks T.W. Jr., Edmond J., Swindle J.T., Schetzina J.F., Song Y.-K., Kuball M., Nurmikko A. Mater. Res. Symp. Proc. 482:1997;1169.
3. Kuramata A., Domen K., Soejima R., Horino K., Kubota S., Tanahashi T. Mater. Res. Sci. Proc. 482:1997;1185.
4. Davis R.F., Bremser M.D., Perry W.G., Ailey K.S. J. Eur. Ceram. Soc. 17:1997;1775.
5. Heying B., Wu X.H., Keller S., Li Y., Kapolnek D., Keller B.P., DenBaars S.P., Speck J.S. Appl. Phys. Lett. 68:1996;643.
6. Hansen P.J., Strausser Y.E., Erickson A.N., Tarsa E.J., Kozodoy P., Brazel E.G., Ibbetson J.P., Mishra U., Narayanamurti V., DenBaars S.P., Speck J.S. Appl. Phys. Lett. 72:1998;2247.
7. Brazel E.G., Chin M.A., Narayanamurti V. Appl. Phys. Lett. 74:1999;2367.
8. Kozodoy P., Ibbetson J.P., Marchand H., Fini P.T., Keller S., Speck J.S., DenBaars S.P., Mishra U.K. Appl. Phys. Lett. 73:1998;975.
9. Smart J.A., Schremer A.T., Weimann N.G., Ambacher O., Eastman L.F., Shealy J.R. Appl. Phys. Lett. 75:1999;388.