Comprehensive characterization of hydride VPE grown GaN layers and templates

Materials Science and Engineering: R: Reports

Volumn 33, Issue 5-6, 2001, Pages 135-207

  Morkoc H ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

Electric force microscopy; GaN layers; Hydride VPE

Indexed keywords

CHARGE TRANSFER; ELECTRON DIFFRACTION; ELECTRON SPIN RESONANCE SPECTROSCOPY; ETCHING; GALLIUM NITRIDE; HALL EFFECT; HIGH RESOLUTION ELECTRON MICROSCOPY; HYDRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY; X RAY DIFFRACTION ANALYSIS;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED);

SEMICONDUCTING FILMS;

EID: 0035876466     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-796X(01)00031-6     Document Type: Review

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