Dislocation generation in GaN heteroepitaxy

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 231-243

  Wu, X H ^a   Fini, P ^a   Tarsa, E J ^a   Heying, B ^a   Keller, S ^a   Mishra, U K ^a   DenBaars, S P ^a   Speck, J S ^a  

^a University of California   (United States)

Author keywords

Defect structure; GaN; MOCVD; Morphology; Nucleation layer; Threading dislocations; Two step growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NUCLEATION; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

THREADING DISLOCATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032094525     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00240-1     Document Type: Article

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